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0.3-µm-step mapping of the graphene modes at a 532-nm laser line and comprehensive data analysis
Three-dimensional material-sensitive reconstructions with 0.3-µm lateral resolution and sub-diffractive vertical resolution at a 532-nm laser line
Fractional assessment of the number of the graphene layers based on the shadow that graphene casts on substrate-related Raman-active modes
Mapping of the ellipsometric angles Ψ and Δ at the wavelength of 490 nm
Fractional assessment of the number of the graphene layers based on the distribution of the ellipsometric angle Ψ at the wavelength of 490 nm
Assessment of the uniformity of the electrical properties based on the distribution of the surface potential relative to a silicon probe
Direct-current Hall-effect-derived charge carrier concentration and mobility in static magnetic field of 0.55 T in the temperature range of 300 K to 770 K
In-situ-etched semi-insulating vanadium-compensated on-axis 500-µm-thick 6H-SiC(0001) in two formats: 15 mm × 15 mm and 20 mm × 20 mm
In-situ-etched semi-insulating high-purity on-axis 500-µm-thick 4H-SiC(0001)
in two formats: 15 mm × 15 mm and 20 mm × 20 mm
Transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated nominally on-axis 500-µm-thick 6H-SiC(0001) in two formats:
15 mm × 15 mm and 20 mm × 20 mm
Transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating high-purity nominally on-axis 500-µm-thick 4H-SiC(0001) in two formats: 15 mm × 15 mm and 20 mm × 20 mm
Four-terminal 1.4-mm × 1.4-mm van der Pauw structure featuring an equal-arm cross-shaped 100-µm × 300-µm active area made of p-type hydrogen-intercalated QFS epitaxial CVD graphene on SI vanadium-compensated on-axis 500-µm-thick 6H-SiC(0001) and passivated with a 100-nm-thick layer of amorphous atomic-layer-deposited Al2O3
Four-terminal 1.4-mm × 1.4-mm van der Pauw structure featuring an equal-arm cross-shaped 100-µm × 300-µm active area made of p-type hydrogen-intercalated QFS epitaxial CVD graphene on SI high-purity on-axis 500-µm-thick 4H-SiC(0001) and passivated with a 100-nm-thick layer of amorphous atomic-layer-deposited Al2O3
Four-terminal 1.4-mm × 1.4-mm van der Pauw structure featuring an equal-arm cross-shaped 100-µm × 300-µm active area made of p-type hydrogen-intercalated QFS epitaxial CVD graphene on pre-epitaxially-modified SI high-purity on-axis 500-µm-thick 4H-SiC(0001) and passivated with a 100-nm-thick layer of amorphous atomic-layer-deposited Al2O3
Dobrowolski A., Jagiełło J., Pyrzanowska B., Piętak-Jurczak K., Możdżyńska E.B., Ciuk T. Scientific Reports, 14, art. no. 22468.
Ciuk, T., Nouvellon, C., Monteverde, F., Stańczyk, B., Przyborowska, K., Czołak, D., El-Ahmar, S. IEEE Electron Device Letters, 45, art. no. 1957 – 1960.
Ciuk, T., Pyrzanowska, B., Jagiełło, J., Dobrowolski, A., Czołak, D., Szary M. J. Applied Surface Science, 675, art. no. 160958.
Piętak-Jurczak, K., Gaca, J., Dobrowolski, A., Jagiełło, J., Wzorek, M., Zalewska, A., Ciuk, T. ACS Applied Electronic Materials, 6, art. no. 1729−1739.
Dobrowolski, A., Jagiełło, J., Piętak-Jurczak, K., Wzorek, M., Czołak, D., Ciuk, T.
Applied Surface Science, 642, art. no. 158617.
