Graphene Epitaxy Technologies

for top-notch R&D and commercial applications

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High-resolution 2D Raman imaging

0.3-µm-step mapping of the graphene modes at a 532-nm laser line and comprehensive data analysis

Phase-resolved 3D Raman imaging

Three-dimensional material-sensitive reconstructions with 0.3-µm lateral resolution and sub-diffractive vertical resolution at a 532-nm laser line

Functional Raman analysis

Fractional assessment of the number of the graphene layers based on the shadow that graphene casts on substrate-related Raman-active modes

2D ellipsometric imaging

Mapping of the ellipsometric angles Ψ and Δ at the wavelength of 490 nm    

Functional ellipsometric analysis

Fractional assessment of the number of the graphene layers based on the distribution of the ellipsometric angle Ψ at the wavelength of 490 nm 

2D Kelvin probe analysis

Assessment of the uniformity of the electrical properties based on the distribution of the surface potential relative to a silicon probe 

Transport assessment

Direct-current Hall-effect-derived charge carrier concentration and mobility in static magnetic field of 0.55 T in the temperature range of 300 K to 770 K

Materials

Atomically flat 6H-SiC

In-situ-etched semi-insulating vanadium-compensated on-axis 500-µm-thick 6H-SiC(0001) in two formats: 15 mm × 15 mm and 20 mm × 20 mm

Atomically flat 4H-SiC

In-situ-etched semi-insulating high-purity on-axis 500-µm-thick 4H-SiC(0001)
in two formats: 15 mm × 15 mm and 20 mm × 20 mm

Graphene on 6H-SiC

Transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated nominally on-axis 500-µm-thick 6H-SiC(0001) in two formats:
15 mm × 15 mm and 20 mm × 20 mm

Graphene on 4H-SiC

Transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating high-purity nominally on-axis 500-µm-thick 4H-SiC(0001) in two formats: 15 mm × 15 mm and 20 mm × 20 mm

Amorphous Al2O3

Amorphous atomic-layer-deposited aluminum oxide on custom substrate: 10 nm to 100 nm

Devices

Graphene Hall effect sensor on 6H-SiC

Four-terminal 1.4-mm × 1.4-mm van der Pauw structure featuring an equal-arm cross-shaped 100-µm × 300-µm active area made of p-type hydrogen-intercalated QFS epitaxial CVD graphene on SI vanadium-compensated on-axis 500-µm-thick 6H-SiC(0001) and passivated with a 100-nm-thick layer of amorphous atomic-layer-deposited Al2O3

Graphene Hall effect sensor on 4H-SiC

Four-terminal 1.4-mm × 1.4-mm van der Pauw structure featuring an equal-arm cross-shaped 100-µm × 300-µm active area made of p-type hydrogen-intercalated QFS epitaxial CVD graphene on SI high-purity on-axis 500-µm-thick 4H-SiC(0001) and passivated with a 100-nm-thick layer of amorphous atomic-layer-deposited Al2O3

Graphene Hall effect sensor on defect-engineered 4H-SiC

Four-terminal 1.4-mm × 1.4-mm van der Pauw structure featuring an equal-arm cross-shaped 100-µm × 300-µm active area made of p-type hydrogen-intercalated QFS epitaxial CVD graphene on pre-epitaxially-modified SI high-purity on-axis 500-µm-thick 4H-SiC(0001) and passivated with a 100-nm-thick layer of amorphous atomic-layer-deposited Al2O3

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References

PRISM: three-dimensional sub-diffractive phase-resolved imaging spectroscopic method

2024

Dobrowolski A., Jagiełło J., Pyrzanowska B., Piętak-Jurczak K., Możdżyńska E.B., Ciuk T. Scientific Reports, 14, art. no. 22468.

High-temperature Thermal Stability of a Graphene Hall Effect Sensor on Defect-engineered 4H-SiC(0001)

2024

Ciuk, T.,  Nouvellon, C., Monteverde, F., Stańczyk, B., Przyborowska, K., Czołak, D., El-Ahmar, S.  IEEE Electron Device Letters, 45, art. no. 1957 – 1960.

Quasi-free-standing epitaxial graphene on 4H-SiC(0001) as a two-dimensional reference standard for Kelvin Probe Force Microscopy

2024

Ciuk, T.,  Pyrzanowska, B., Jagiełło, J., Dobrowolski, A., Czołak, D., Szary M. J.  Applied Surface Science, 675, art. no. 160958.

Origin of the Double Polarization Mechanism in Aluminum-Oxide-passivated Quasi-free-standing Epitaxial Graphene on 6H-SiC(0001)

2024

Piętak-Jurczak, K.,  Gaca, J., Dobrowolski, A., Jagiełło, J., Wzorek, M., Zalewska, A., Ciuk, T. ACS Applied Electronic Materials, 6, art. no. 1729−1739.

Spectroscopic properties of close-to-perfect-monolayer quasi-free-standing epitaxial graphene on 6H-SiC(0001)

2024

Dobrowolski, A., Jagiełło, J., Piętak-Jurczak, K., Wzorek, M., Czołak, D., Ciuk, T.
Applied Surface Science, 642, art. no. 158617.

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