for top-notch R&D and commercial applications
0.3-µm-step mapping of the graphene modes at a 532-nm laser line and comprehensive data analysis
Three-dimensional material-sensitive reconstructions with 0.3-µm lateral resolution and sub-diffractive vertical resolution at a 532-nm laser line
Fractional assessment of the number of the graphene layers based on the shadow that graphene casts on substrate-related Raman-active modes
Mapping of the ellipsometric angles Ψ and Δ at the wavelength of 490 nm
Fractional assessment of the number of the graphene layers based on the distribution of the ellipsometric angle Ψ at the wavelength of 490 nm
Assessment of the uniformity of the electrical properties based on the distribution of the surface potential relative to a silicon probe
Direct-current Hall-effect-derived charge carrier concentration and mobility in static magnetic field of 0.55 T in the temperature range of 300 K to 770 K
In-situ-etched semi-insulating vanadium-compensated on-axis 500-µm-thick 6H-SiC(0001) in two formats: 15 mm × 15 mm and 20 mm × 20 mm
In-situ-etched semi-insulating high-purity on-axis 500-µm-thick 4H-SiC(0001)
in two formats: 15 mm × 15 mm and 20 mm × 20 mm
Transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated nominally on-axis 500-µm-thick 6H-SiC(0001) in two formats:
15 mm × 15 mm and 20 mm × 20 mm
Transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating high-purity nominally on-axis 500-µm-thick 4H-SiC(0001) in two formats: 15 mm × 15 mm and 20 mm × 20 mm
Four-terminal 1.4-mm × 1.4-mm van der Pauw structure featuring an equal-arm cross-shaped 100-µm × 300-µm active area made of p-type hydrogen-intercalated QFS epitaxial CVD graphene on SI vanadium-compensated on-axis 500-µm-thick 6H-SiC(0001) and passivated with a 100-nm-thick layer of amorphous atomic-layer-deposited Al2O3
Four-terminal 1.4-mm × 1.4-mm van der Pauw structure featuring an equal-arm cross-shaped 100-µm × 300-µm active area made of p-type hydrogen-intercalated QFS epitaxial CVD graphene on SI high-purity on-axis 500-µm-thick 4H-SiC(0001) and passivated with a 100-nm-thick layer of amorphous atomic-layer-deposited Al2O3
Four-terminal 1.4-mm × 1.4-mm van der Pauw structure featuring an equal-arm cross-shaped 100-µm × 300-µm active area made of p-type hydrogen-intercalated QFS epitaxial CVD graphene on pre-epitaxially-modified SI high-purity on-axis 500-µm-thick 4H-SiC(0001) and passivated with a 100-nm-thick layer of amorphous atomic-layer-deposited Al2O3
Sacco L.N., Dobrowolski A., Boshuizen B., Jagiełło J., Pyrzanowska B., Łaszcz A., Ciuk T., Vollebregt S. Diamond and Related Materials, 154, art. no. 112195
Ciura L., Jagiello J., Dobrowolski A., Pietak-Jurczak K., Ciuk T. IEEE Transactions on Electron Devices
El-Ahmar S., Jagiełło J., Szary M.J., Reddig W., Dobrowolski A., Prokopowicz R., Ziemba M., Ciuk T. Applied Surface Science, 685, art. no. 161953.
