Graphene Epitaxy Technologies

for top-notch R&D and commercial applications

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High-resolution 2D Raman imaging

0.3-µm-step mapping of the graphene modes at a 532-nm laser line and comprehensive data analysis

Phase-resolved 3D Raman imaging

Three-dimensional material-sensitive reconstructions with 0.3-µm lateral resolution and sub-diffractive vertical resolution at a 532-nm laser line

Functional Raman analysis

Fractional assessment of the number of the graphene layers based on the shadow that graphene casts on substrate-related Raman-active modes

2D ellipsometric imaging

Mapping of the ellipsometric angles Ψ and Δ at the wavelength of 490 nm    

Functional ellipsometric analysis

Fractional assessment of the number of the graphene layers based on the distribution of the ellipsometric angle Ψ at the wavelength of 490 nm 

2D Kelvin probe analysis

Assessment of the uniformity of the electrical properties based on the distribution of the surface potential relative to a silicon probe 

Transport assessment

Direct-current Hall-effect-derived charge carrier concentration and mobility in static magnetic field of 0.55 T in the temperature range of 300 K to 770 K

Materials

Atomically flat 6H-SiC

In-situ-etched semi-insulating vanadium-compensated on-axis 500-µm-thick 6H-SiC(0001) in two formats: 15 mm × 15 mm and 20 mm × 20 mm

Atomically flat 4H-SiC

In-situ-etched semi-insulating high-purity on-axis 500-µm-thick 4H-SiC(0001)
in two formats: 15 mm × 15 mm and 20 mm × 20 mm

Graphene on 6H-SiC

Transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated nominally on-axis 500-µm-thick 6H-SiC(0001) in two formats:
15 mm × 15 mm and 20 mm × 20 mm

Graphene on 4H-SiC

Transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating high-purity nominally on-axis 500-µm-thick 4H-SiC(0001) in two formats: 15 mm × 15 mm and 20 mm × 20 mm

Amorphous Al2O3

Amorphous atomic-layer-deposited aluminum oxide on custom substrate: 10 nm to 100 nm

Devices

Graphene Hall effect sensor on 6H-SiC

Four-terminal 1.4-mm × 1.4-mm van der Pauw structure featuring an equal-arm cross-shaped 100-µm × 300-µm active area made of p-type hydrogen-intercalated QFS epitaxial CVD graphene on SI vanadium-compensated on-axis 500-µm-thick 6H-SiC(0001) and passivated with a 100-nm-thick layer of amorphous atomic-layer-deposited Al2O3

Graphene Hall effect sensor on 4H-SiC

Four-terminal 1.4-mm × 1.4-mm van der Pauw structure featuring an equal-arm cross-shaped 100-µm × 300-µm active area made of p-type hydrogen-intercalated QFS epitaxial CVD graphene on SI high-purity on-axis 500-µm-thick 4H-SiC(0001) and passivated with a 100-nm-thick layer of amorphous atomic-layer-deposited Al2O3

Graphene Hall effect sensor on defect-engineered 4H-SiC

Four-terminal 1.4-mm × 1.4-mm van der Pauw structure featuring an equal-arm cross-shaped 100-µm × 300-µm active area made of p-type hydrogen-intercalated QFS epitaxial CVD graphene on pre-epitaxially-modified SI high-purity on-axis 500-µm-thick 4H-SiC(0001) and passivated with a 100-nm-thick layer of amorphous atomic-layer-deposited Al2O3

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References

Origin of the Double Polarization Mechanism in Aluminum-Oxide-passivated Quasi-free-standing Epitaxial Graphene on 6H-SiC(0001)

2024

Piętak-Jurczak, K.,  Gaca, J., Dobrowolski, A., Jagiełło, J., Wzorek, M., Zalewska, A., Ciuk, T. ACS Applied Electronic Materials, 6, art. no. 1729−1739.

Spectroscopic properties of close-to-perfect-monolayer quasi-free-standing epitaxial graphene on 6H-SiC(0001)

2024

Dobrowolski, A., Jagiełło, J., Piętak-Jurczak, K., Wzorek, M., Czołak, D., Ciuk, T.
Applied Surface Science, 642, art. no. 158617.

Defect-engineered graphene-on-silicon-carbide platform for magnetic field sensing at greatly elevated temperatures

2023

Ciuk, T., Kozłowski, R., Romanowska, A., Zagojski, A., Piętak-Jurczak, K., Stańczyk, B., Przyborowska, K., Czołak, D., Kamiński, P.
Carbon Trends, 13, art. no. 100303.

High-Temperature Stability of Sensor Platforms Designed to Detect Magnetic Fields in a Harmful Radiation Environment

2023

Reddig, W., Przychodnia, M., Ciuk, T., El-Ahmar, S.
IEEE Sensors Letters, 7 (8), art. no. 2502204.

Layer-resolved Raman imaging and analysis of parasitic ad-layers in transferred graphene

2023

Dobrowolski A., Jagiełło J., Ciuk T., Piętak K., Możdżyńska E.B.
Applied Surface Science, 608, art. no. 155054.

Contamination-induced inhomogeneity of noise sources distribution in Al2O3-passivated quasi-free-standing graphene on 4H-SiC(0001)

2022

Ciuk, T., Ciura, Ł., Michałowski, P.P., Jagiełło, J., Dobrowolski, A., Piętak, K., Kalita, D., Wzorek, M., Budzich, R., Czołak, D., Kolek, A.
Physica E: Low-Dimensional Systems and Nanostructures, 142, art. no. 115264.

Graphene on SiC as a promising platform for magnetic field detection under neutron irradiation

2022

El-Ahmar, S., Szary, M.J., Ciuk, T., Prokopowicz, R., Dobrowolski, A., Jagiełło, J., Ziemba, M.
Applied Surface Science, 590, art. no. 152992.

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