References

High-temperature Thermal Stability of a Graphene Hall Effect Sensor on Defect-engineered 4H-SiC(0001)

2024

Ciuk, T.,  Nouvellon, C., Monteverde, F., Stańczyk, B., Przyborowska, K., Czołak, D., El-Ahmar, S.  IEEE Electron Device Letters, —, art. no. —.

Quasi-free-standing epitaxial graphene on 4H-SiC(0001) as a two-dimensional reference standard for Kelvin Probe Force Microscopy

2024

Ciuk, T.,  Pyrzanowska, B., Jagiełło, J., Dobrowolski, A., Czołak, D., Szary M. J.  Applied Surface Science, 675, art. no. 160958.

Origin of the Double Polarization Mechanism in Aluminum-Oxide-passivated Quasi-free-standing Epitaxial Graphene on 6H-SiC(0001)

2024

Piętak-Jurczak, K.,  Gaca, J., Dobrowolski, A., Jagiełło, J., Wzorek, M., Zalewska, A., Ciuk, T. ACS Applied Electronic Materials, 6, art. no. 1729−1739.

Spectroscopic properties of close-to-perfect-monolayer quasi-free-standing epitaxial graphene on 6H-SiC(0001)

2024

Dobrowolski, A., Jagiełło, J., Piętak-Jurczak, K., Wzorek, M., Czołak, D., Ciuk, T.
Applied Surface Science, 642, art. no. 158617.

Defect-engineered graphene-on-silicon-carbide platform for magnetic field sensing at greatly elevated temperatures

2023

Ciuk, T., Kozłowski, R., Romanowska, A., Zagojski, A., Piętak-Jurczak, K., Stańczyk, B., Przyborowska, K., Czołak, D., Kamiński, P.
Carbon Trends, 13, art. no. 100303.

High-Temperature Stability of Sensor Platforms Designed to Detect Magnetic Fields in a Harmful Radiation Environment

2023

Reddig, W., Przychodnia, M., Ciuk, T., El-Ahmar, S.
IEEE Sensors Letters, 7 (8), art. no. 2502204.

Layer-resolved Raman imaging and analysis of parasitic ad-layers in transferred graphene

2023

Dobrowolski A., Jagiełło J., Ciuk T., Piętak K., Możdżyńska E.B.
Applied Surface Science, 608, art. no. 155054.

Contamination-induced inhomogeneity of noise sources distribution in Al2O3-passivated quasi-free-standing graphene on 4H-SiC(0001)

2022

Ciuk, T., Ciura, Ł., Michałowski, P.P., Jagiełło, J., Dobrowolski, A., Piętak, K., Kalita, D., Wzorek, M., Budzich, R., Czołak, D., Kolek, A.
Physica E: Low-Dimensional Systems and Nanostructures, 142, art. no. 115264.

Graphene on SiC as a promising platform for magnetic field detection under neutron irradiation

2022

El-Ahmar, S., Szary, M.J., Ciuk, T., Prokopowicz, R., Dobrowolski, A., Jagiełło, J., Ziemba, M.
Applied Surface Science, 590, art. no. 152992.

The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions

2022

El-Ahmar, S., Przychodnia, M., Jankowski, J., Prokopowicz, R., Ziemba, M., Szary, M.J., Reddig, W., Jagiełło, J., Dobrowolski, A., Ciuk, T.

Applied Physics Letters, 120 (6), art. no. 063105.

Enhancement of graphene-related and substrate-related Raman modes through dielectric layer deposition

2022

Piętak, K., Jagiełło, J., Dobrowolski, A., Budzich, R., Wysmołek, A., Ciuk, T.

Applied Physics Letters, 120 (6), art. no. 063105

Determining the number of graphene layers based on Raman response of the SiC substrate

2021

Dobrowolski, A., Jagiełło, J., Czołak, D., Ciuk, T.

Physica E: Low-Dimensional Systems and Nanostructures, 134, art. no. 114853.

The impact of partial H intercalation on the quasi-free-standing properties of graphene on SiC(0001)

2021

Szary, M.J., El-Ahmar, S., Ciuk, T.

Applied Surface Science, 541, art. no. 148668.

Magnetophonon resonance on the phonon frequency difference in quasi-free-standing graphene

2021

Zak, D., Strupinski, W., Ciuk, T., Wojnarowska-Nowak, R., Śliż, P., Tomaka, G., Ploch, D., Sheregii, E.M.

Physical Review B, 103 (3), art. no. 035432.

High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC

2019

Ciuk, T., Kozlowski, A., Michalowski, P.P., Kaszub, W., Kozubal, M., Rekuc, Z., Podgorski, J., Stanczyk, B., Przyborowska, K., Jozwik, I., Kowalik, A., Kaminski, P.

Carbon, 139, pp. 776-781.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

2017

Habibpour, O., He, Z.S., Strupinski, W., Rorsman, N., Zirath, H.

Scientific Reports, 7, art. no. 41828.

A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

2017

Habibpour, O., He, Z.S., Strupinski, W., Rorsman, N., Ciuk, T., Ciepielewski, P., Zirath, H.

IEEE Microwave and Wireless Components Letters, 27 (2), art. no. 7836348, pp. 168-170.

Generic Graphene Based Components and Circuits for Millimeter Wave High Data-rate Communication Systems

2017

Habibpour, O., Strupinski, W., Rorsman, N., Ciepielewski, P., Zirath, H.

MRS Advances, 2 (58-59), pp. 3559-3564.

Low-noise epitaxial graphene on SiC Hall effect element for commercial applications

2016

Ciuk T., Petruk O., Kowalik A., Jozwik I., Rychter A., Szmidt J., Strupinski W.

Applied Physics Letters, 108 (22), art. no. 223504

Charge carrier concentration and offset voltage in quasi-free-standing monolayer chemical vapor deposition graphene on SiC

2016

Ciuk, T., Caban, P., Strupinski, W.

Carbon, 101, pp. 431-438.

Graphene FET gigabit ON-OFF keying demodulator at 96 GHz

2016

Habibpour, O., He, Z.S., Strupinski, W., Rorsman, N., Ciuk, T., Ciepielewski, P., Zirath, H.

IEEE Electron Device Letters, 37 (3), art. no. 2517212, pp. 333-336.

Statistics of epitaxial graphene for Hall effect sensors

2015

Ciuk, T., Strupinski, W.

(2015) Carbon, 93, pp. 1042-1049.

Formation mechanism of graphene buffer layer on SiC(0001)

2015

Strupinski, W., Grodecki, K., Caban, P., Ciepielewski, P., Jozwik-Biala, I., Baranowski, J.M.

Carbon, 81 (1), pp. 63-72.

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

2014

Ciuk, T., Cakmakyapan, S., Ozbay, E., Caban, P., Grodecki, K., Krajewska, A., Pasternak, I., Szmidt, J., Strupinski, W.

Journal of Applied Physics, 116 (12), art. no. 123708

Graphene epitaxy by chemical vapor deposition on SiC

2011

Strupinski, W., Grodecki, K., Wysmolek, A., Stepniewski, R., Szkopek, T., Gaskell, P.E., Grüneis, A., Haberer, D., Bozek, R., Krupka, J., Baranowski, J.M.

Nano Letters, 11 (4), pp. 1786-1791.

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