Origin of the Double Polarization Mechanism in Aluminum-Oxide-passivated Quasi-free-standing Epitaxial Graphene on 6H-SiC(0001)


Piętak-Jurczak, K.,  Gaca, J., Dobrowolski, A., Jagiełło, J., Wzorek, M., Zalewska, A., Ciuk, T. ACS Applied Electronic Materials, 6, art. no. 1729−1739.

Spectroscopic properties of close-to-perfect-monolayer quasi-free-standing epitaxial graphene on 6H-SiC(0001)


Dobrowolski, A., Jagiełło, J., Piętak-Jurczak, K., Wzorek, M., Czołak, D., Ciuk, T.
Applied Surface Science, 642, art. no. 158617.

Defect-engineered graphene-on-silicon-carbide platform for magnetic field sensing at greatly elevated temperatures


Ciuk, T., Kozłowski, R., Romanowska, A., Zagojski, A., Piętak-Jurczak, K., Stańczyk, B., Przyborowska, K., Czołak, D., Kamiński, P.
Carbon Trends, 13, art. no. 100303.

High-Temperature Stability of Sensor Platforms Designed to Detect Magnetic Fields in a Harmful Radiation Environment


Reddig, W., Przychodnia, M., Ciuk, T., El-Ahmar, S.
IEEE Sensors Letters, 7 (8), art. no. 2502204.

Layer-resolved Raman imaging and analysis of parasitic ad-layers in transferred graphene


Dobrowolski A., Jagiełło J., Ciuk T., Piętak K., Możdżyńska E.B.
Applied Surface Science, 608, art. no. 155054.

Contamination-induced inhomogeneity of noise sources distribution in Al2O3-passivated quasi-free-standing graphene on 4H-SiC(0001)


Ciuk, T., Ciura, Ł., Michałowski, P.P., Jagiełło, J., Dobrowolski, A., Piętak, K., Kalita, D., Wzorek, M., Budzich, R., Czołak, D., Kolek, A.
Physica E: Low-Dimensional Systems and Nanostructures, 142, art. no. 115264.

Graphene on SiC as a promising platform for magnetic field detection under neutron irradiation


El-Ahmar, S., Szary, M.J., Ciuk, T., Prokopowicz, R., Dobrowolski, A., Jagiełło, J., Ziemba, M.
Applied Surface Science, 590, art. no. 152992.

The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions


El-Ahmar, S., Przychodnia, M., Jankowski, J., Prokopowicz, R., Ziemba, M., Szary, M.J., Reddig, W., Jagiełło, J., Dobrowolski, A., Ciuk, T.

Applied Physics Letters, 120 (6), art. no. 063105.

Enhancement of graphene-related and substrate-related Raman modes through dielectric layer deposition


Piętak, K., Jagiełło, J., Dobrowolski, A., Budzich, R., Wysmołek, A., Ciuk, T.

Applied Physics Letters, 120 (6), art. no. 063105

Determining the number of graphene layers based on Raman response of the SiC substrate


Dobrowolski, A., Jagiełło, J., Czołak, D., Ciuk, T.

Physica E: Low-Dimensional Systems and Nanostructures, 134, art. no. 114853.

The impact of partial H intercalation on the quasi-free-standing properties of graphene on SiC(0001)


Szary, M.J., El-Ahmar, S., Ciuk, T.

Applied Surface Science, 541, art. no. 148668.

Magnetophonon resonance on the phonon frequency difference in quasi-free-standing graphene


Zak, D., Strupinski, W., Ciuk, T., Wojnarowska-Nowak, R., Śliż, P., Tomaka, G., Ploch, D., Sheregii, E.M.

Physical Review B, 103 (3), art. no. 035432.

High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC


Ciuk, T., Kozlowski, A., Michalowski, P.P., Kaszub, W., Kozubal, M., Rekuc, Z., Podgorski, J., Stanczyk, B., Przyborowska, K., Jozwik, I., Kowalik, A., Kaminski, P.

Carbon, 139, pp. 776-781.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication


Habibpour, O., He, Z.S., Strupinski, W., Rorsman, N., Zirath, H.

Scientific Reports, 7, art. no. 41828.

A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET


Habibpour, O., He, Z.S., Strupinski, W., Rorsman, N., Ciuk, T., Ciepielewski, P., Zirath, H.

IEEE Microwave and Wireless Components Letters, 27 (2), art. no. 7836348, pp. 168-170.

Generic Graphene Based Components and Circuits for Millimeter Wave High Data-rate Communication Systems


Habibpour, O., Strupinski, W., Rorsman, N., Ciepielewski, P., Zirath, H.

MRS Advances, 2 (58-59), pp. 3559-3564.

Low-noise epitaxial graphene on SiC Hall effect element for commercial applications


Ciuk T., Petruk O., Kowalik A., Jozwik I., Rychter A., Szmidt J., Strupinski W.

Applied Physics Letters, 108 (22), art. no. 223504

Charge carrier concentration and offset voltage in quasi-free-standing monolayer chemical vapor deposition graphene on SiC


Ciuk, T., Caban, P., Strupinski, W.

Carbon, 101, pp. 431-438.

Graphene FET gigabit ON-OFF keying demodulator at 96 GHz


Habibpour, O., He, Z.S., Strupinski, W., Rorsman, N., Ciuk, T., Ciepielewski, P., Zirath, H.

IEEE Electron Device Letters, 37 (3), art. no. 2517212, pp. 333-336.

Statistics of epitaxial graphene for Hall effect sensors


Ciuk, T., Strupinski, W.

(2015) Carbon, 93, pp. 1042-1049.

Formation mechanism of graphene buffer layer on SiC(0001)


Strupinski, W., Grodecki, K., Caban, P., Ciepielewski, P., Jozwik-Biala, I., Baranowski, J.M.

Carbon, 81 (1), pp. 63-72.

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC


Ciuk, T., Cakmakyapan, S., Ozbay, E., Caban, P., Grodecki, K., Krajewska, A., Pasternak, I., Szmidt, J., Strupinski, W.

Journal of Applied Physics, 116 (12), art. no. 123708

Graphene epitaxy by chemical vapor deposition on SiC


Strupinski, W., Grodecki, K., Wysmolek, A., Stepniewski, R., Szkopek, T., Gaskell, P.E., Grüneis, A., Haberer, D., Bozek, R., Krupka, J., Baranowski, J.M.

Nano Letters, 11 (4), pp. 1786-1791.

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