Origin of the Double Polarization Mechanism in Aluminum-Oxide-passivated Quasi-free-standing Epitaxial Graphene on 6H-SiC(0001)
2024
Piętak-Jurczak, K., Gaca, J., Dobrowolski, A., Jagiełło, J., Wzorek, M., Zalewska, A., Ciuk, T. ACS Applied Electronic Materials, 6, art. no. 1729−1739.
Defect-engineered graphene-on-silicon-carbide platform for magnetic field sensing at greatly elevated temperatures
2023
Ciuk, T., Kozłowski, R., Romanowska, A., Zagojski, A., Piętak-Jurczak, K., Stańczyk, B., Przyborowska, K., Czołak, D., Kamiński, P. Carbon Trends, 13, art. no. 100303.
Contamination-induced inhomogeneity of noise sources distribution in Al2O3-passivated quasi-free-standing graphene on 4H-SiC(0001)
2022
Ciuk, T., Ciura, Ł., Michałowski, P.P., Jagiełło, J., Dobrowolski, A., Piętak, K., Kalita, D., Wzorek, M., Budzich, R., Czołak, D., Kolek, A. Physica E: Low-Dimensional Systems and Nanostructures, 142, art. no. 115264.
High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC
2019
Ciuk, T., Kozlowski, A., Michalowski, P.P., Kaszub, W., Kozubal, M., Rekuc, Z., Podgorski, J., Stanczyk, B., Przyborowska, K., Jozwik, I., Kowalik, A., Kaminski, P.
Graphene epitaxy by chemical vapor deposition on SiC
2011
Strupinski, W., Grodecki, K., Wysmolek, A., Stepniewski, R., Szkopek, T., Gaskell, P.E., Grüneis, A., Haberer, D., Bozek, R., Krupka, J., Baranowski, J.M.